Alliance Memory announces that it has expanded its portfolio of CMOS DDR4 SDRAMs with new “A” die versions of the 4Gb AS4C256M16D4 and AS4C512M8D4 in the 96-ball and 78-ball FBGA packages, respectively.
Built on a finer process that results in a smaller chip than the original, the AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN,
AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN deliver improved performance — with lower power consumption and higher speeds and transfer rates — at a lower cost.
In addition, Alliance Memory is continuing its partnership with Micron Technology and offering the company’s MT40A1G16KH-062E DDR4 SDRAM to provide
customers with a 16Gb option.
Parts Table:
Key Specifications and Benefits:
- 4Gb Alliance Memory DDR4 SDRAMs
- Low operating voltages of +1.2V (±0.06V)
- Built on a new process technology for fast clock speeds up to 1600MHz and transfer rates up to 3200Mbps
- Support sequential and interleave burst types with read or write burst lengths of BL8/BC4/BC4 or 8 on the fly
- An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
- Easy-to-use refresh functions include auto- or self-refresh
- Offered in commercial (0°C to +95°C) and industrial (-40°C to +95°C) temperature ranges
- 16Gb Micron Technology DDR4 SDRAM
- Operates from a +1.2V power supply over a commercial temperature range
- Built on an 8n-prefetch architecture for high data rates of 3200 MT/s
- Supports read or write burst lengths of BC4 or BL8 on the fly
Target Applications:
- Portable electronics, such as smartphones and tablets
- 5G designs, computing applications, surveillance systems, smart meters, human-machine interfaces (HMI), digital signal controllers, and PNDs
The Context: Built on a finer process that results in a smaller chip than the original 4Gb AS4C256M16D4A and AS4C512M8D4 DDR4 SDRAMs, Alliance Memory’s new “A” die versions deliver improved performance — with lower power consumption down to +1.2V (±0.06V), faster clock speeds to 1600MHz, and higher transfer rates to 3200Mbps — at a lower cost. With minimal die shrinks, the AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions — eliminating the need for costly redesigns and part requalification. The new “A” die devices are ideal for the industrial, networking, telecommunications, gaming, and consumer markets, for which Alliance Memory is utilizing a dual sourcing strategy to ensure supply longevity. The addition of Micron Technology’s MT40A1G16KH-062E to Alliance Memory’s offering of DDR4 SDRAMs provides the company’s customers with access to a 16Gb device for a wide range of applications.
Availability: Samples and production quantities of the AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, AS4C256M16D4A-75BIN, AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN are available now, with lead times of eight to 12 weeks. Micron’s MT40A1G16KH-062E is available now from stock.
Product Datasheet:
https://www.alliancememory.com/datasheets/AS4C256M16D4A/ (AS4C256M16D4A-62BCN, AS4C256M16D4A-62BIN, AS4C256M16D4A-75BCN, and AS4C256M16D4A-75BIN)
https://www.alliancememory.com/datasheets/MT40A1G16KH-062E/ (MT40A1G16KH-062E)
https://www.alliancememory.com/datasheets/as4c512m8d4a/ (AS4C512M8D4A-75BCN, and AS4C512M8D4A-75BIN)