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USB4 ESD devices from Nexperia provide optimum balance of protection and performance
TrEOS based protection offers industry-leading insertion and return loss to help meet tight system budgets

Nexperia, the expert in essential semiconductors, today announced two Electrostatic Discharge (ESD) protection devices optimized for use with retimers and redrivers on high-speed data lines. PESD2V8Y1BSF is designed to protect USB4 (Thunderbolt) interfaces while PESD4V0Y1BCSF is intended for use with both USB4 as well as HDMI 2.1. These products use Nexperia’s proven TrEOS technology, which combines low clamping with low capacitance and high robustness.

Retimers and redrivers are commonly used in the design of high-speed USB4 interfaces. However, these result in shorter board traces which have a lower parasitic inductance, an unintended consequence of which is a reduction in the overall system-level ESD robustness. The PESD2V8Y1BSF and PESD4V0Y1BCSF provide low very fast Transmission Line Pulse (vfTLP) peak clamping voltages, which are even lower than USB4 protection solutions without visible trigger voltage in the standard I(V) TLP curve. This helps to compensate for the reduced inductance between protection and retimer, thereby increasing overall system-level ESD robustness. To comply with budget loss recommendations for ESD, these devices are designed to have exceptionally low insertion loss (-0.29 dB @ 10 GHz) and return loss (-20.6 dB @ 10 GHz). Contrary to other solutions, the capacitance does not increase with operating voltage, offering the full RF performance up to the reverse standoff voltage.

The PESD2V8Y1BSF and PESD4V0Y1BCSF offer greater design flexibility than other ESD protection devices because they can be placed immediately next to the connector of the device which they are protecting. This means that the AC coupling capacitance is protected as well. On top, it places most of the line inductance between ESD protection and protected device to optimize system ESD performance. “Nexperia enables design engineers to meet tight budgets on both insertion and return loss for high speed USB4 data lines by providing devices that minimize the impact of ESD protection on overall system budget,” says Stefan Seider, senior product manager at Nexperia. “These devices offer the optimum balance between optimizing system-level ESD robustness and RF performance.”

To maintain backward compatibility with older interface standards like USB3.2, which can be connected over USB Type-C, the PESD2V8Y1BSF has a reverse standoff voltage, VRWM = 2.8 V, while the PESD4V0Y1BCSF has a VRWM = 4 V making it suitable for HDMI 2.1 as well. The RF performance of the TrEOS technology used for both devices does not degrade over the operation voltage range. Apart from USB4 and HDMI 2.1, both parts can also be used to protect PCIe or DisplayPort interfaces.

For more information on these new protection devices, including product specifications and datasheet, please visit: https://www.nexperia.com/USB-C_ESD

2022070602 / 06.07.2022 / Electronic-components / NEXPERIA /

Extended NextPower 80/100V MOSFET portfolio from Nexperia offers increased design flexibility

USB4 ESD devices from Nexperia provide optimum balance of protection and performance
TrEOS based protection offers industry-leading insertion and return loss to help meet tight system budgets

Nexperia launches new portfolio of application specific MOSFETs (ASFETs) for automotive airbags
Provides excellent transient linear mode performance using new SOA trench technology in LFPAK packaging providing designers with a smaller and more reliable choice.

Nexperia widens its offering of discrete components in miniature DFN packaging with side-wettable flanks
Rugged and reliable devices are AEC-Q101 compliant and save board space

Nexperia’s 50 µA Zener diodes portfolio extends battery-time and saves PCB space
The comprehensive product range covers every application from 1.8 V to 75 V

Nexperia introduces a range of A-selection Zener diodes for precise voltage reference with the industry’s lowest tolerance of ±1%
The comprehensive product range covers every application from 2.4 V to 75 V

Nexperia expands its wide bandgap semiconductor offering with new family of high-performance Silicon Carbide (SiC) Diodes
Samples of industrial-grade 650 V, 10 A SiC Schottky diode now available. Parts with 1200 V / 6-20 A current range and automotive-grade parts also planned

Nexperia delivers extremely low clamping bidirectional ESD protection devices for USB4 standard interfaces
TrEOS diodes offer industry-leading insertion loss and return loss characteristics for more robust USB4TM data transmission

Nexperia surface-mount device passes Board Level Reliability requirements for automotive application
Reliable and rugged CFP15B clip-bond FlatPower package selected by leading Tier 1 automotive supplier for use on an engine control unit

Nexperia launches ‘Power Live’ September 21-23 2021
Participate in live discussions on GaN, MOSFETs, power diodes and bipolar transistors for automotive and industrial applications; View on-demand video demos direct from Nexperia’s labs

Nexperia receives Bosch Global Supplier Award for the second time in a row
The prestigious award for ‘Purchasing of direct materials – Mobility Solutions’ recognizes Nexperia’s collaborative partnership with Bosch

Nexperia’s new Application-Specific MOSFETs (ASFETs) for hot-swap increase SOA by 166% and slash PCB footprint by 80%
New 80V & 100V devices minimize derating and improve current sharing for optimum performance, high reliability and reduced system cost

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